1 power mosfet IRF9510, sihf9510 features ? dynamic dv/dt rating ? repetitive avalanche rated ? p-channel ? 175 c operating temperature ? fast switching ? ease of paralleling ? simple drive requirements ? lead (pb)-free available description third generation power mosfet s from vishay provide the designer with the best combi nation of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 w. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. v dd = - 25 v, starting t j = 25 c, l = 18 mh, r g = 25 , i as = - 4.0 a (see fig. 12). c. i sd - 4.0 a, di/dt 75 a/s, v dd v ds , t j 175 c. d. 1.6 mm from case. product summary v ds (v) - 100 r ds(on) ( )v gs = - 10 v 1.2 q g (max.) (nc) 8.7 q gs (nc) 2.2 q gd (nc) 4.1 configuration single s g d p-channel mosfet to-220 g d s a v aila b le rohs* compliant ordering information package to-220 lead (pb)-free IRF9510pbf sihf9510-e3 snpb IRF9510 sihf9510 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 100 v gate-source voltage v gs 20 continuous drain current v gs at - 10 v t c = 25 c i d - 4.0 a t c = 100 c - 2.8 pulsed drain current a i dm - 16 linear derating factor 0.29 w/c single pulse avalanche energy b e as 200 mj repetitive avalanche current a i ar - 4.0 a repetitive avalanche energy a e ar 4.3 mj maximum power dissipation t c = 25 c p d 43 w peak diode recovery dv/dt c dv/dt - 5.5 v/ns operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m www.kersemi.com
2 IRF9510, sihf9510 notes a. repetitive rating; pulse width limited by maximum junction temper ature (see fig. 11). b. pulse width 300 s; duty cycle 2 %. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -3.5 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 100 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = - 1 ma - - 0.091 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 2.0 - - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = - 100 v, v gs = 0 v - - - 100 a v ds = - 80 v, v gs = 0 v, t j = 150 c - - - 500 drain-source on-state resistance r ds(on) v gs = - 10 v i d = - 2.4 a b --1.2 forward transconductance g fs v ds = - 50 v, i d = - 2.4 a b 1.0 - - s dynamic input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1.0 mhz, see fig. 5 - 200 - pf output capacitance c oss -94- reverse transfer capacitance c rss -18- total gate charge q g v gs = - 10 v i d = - 4.0 a, v ds = - 80 v, see fig. 6 and 13 b --8.7 nc gate-source charge q gs --2.2 gate-drain charge q gd --4.1 turn-on delay time t d(on) v dd = - 50 v, i d = - 4.0 a, r g = 24 , r d = 11 , see fig. 10 b -10- ns rise time t r -27- turn-off delay time t d(off) -15- fall time t f -17- internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol showing the integral reverse p - n junction diode --- 4.0 a pulsed diode forward current a i sm --- 16 body diode voltage v sd t j = 25 c, i s = - 4.0 a, v gs = 0 v b --- 5.5 v body diode reverse recovery time t rr t j = 25 c, i f = - 4.0 a, di/dt = 100 a/s b -82160 ns body diode reverse recovery charge q rr - 0.15 0.30 c forward turn-on time t on intrinsic turn-on time is negligib le (turn-on is dominated by l s and l d ) d s g s d g www.kersemi.com
3 IRF9510, sihf9510 fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 175 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature www.kersemi.com
4 IRF9510, sihf9510 fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area www.kersemi.com
5 IRF9510, sihf9510 fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case fig. 12a - unclamped inductive test circui t fig. 12b - unclamped inductive waveforms p u lse w idth 1 s d u ty factor 0.1 % r d v gs r g d.u.t. - 10 v + - v ds v dd v gs 10 % 90 % v ds t d(on) t r t d(off) t f r g i as 0.01 t p d.u.t l v ds + - v dd - 10 v v ary t p to o b tain re qu ired i as i as v ds v dd v ds t p www.kersemi.com
6 IRF9510, sihf9510 fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit q gs q gd q g v g charge - 10 v d.u.t. - 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v c u rrent reg u lator c u rrent sampling resistors same type as d.u.t. + - www.kersemi.com
7 IRF9510, sihf9510 fig. 14 - for p-channel p. w . period di/dt diode reco v ery d v /dt ripple 5 % body diode for w ard drop re-applied v oltage re v erse reco v ery c u rrent body diode for w ard c u rrent v gs = - 10 v * v dd i sd dri v er gate dri v e d.u.t. i sd w a v eform d.u.t. v ds w a v eform ind u ctor c u rrent d = p. w . period + - - - - + + + * v gs = - 5 v for logic le v el and - 3 v dri v e de v ices peak diode recovery dv/dt test circuit v dd ? d v /dt controlled b y r g ? i sd controlled b y d u ty factor "d" ? d.u.t. - de v ice u nder test d.u.t. circ u it layo u t considerations ? lo w stray ind u ctance ? gro u nd plane ? lo w leakage ind u ctance c u rrent transformer r g compliment n -channel of d.u.t. for dri v er www.kersemi.com
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